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APT60GA60JD60

PT IGBT, 600V, 112A, 356W, SOT-227 (ISOTOP)

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APT60GA60JD60 Microchip Technology
APT60GA60JD60 Microchip Technology
APT60GA60JD60 Microchip Technology
pcs
ID Code:187751
Fabricante:Microchip Technology
Precio con IVA : 47,2163 €
Precio sin IVA : 39,0217 €
VAT:21 %
Disponibilidad:a petición
Stock total:0 pcs
Marking manufacturer: APT60GA60JD60
Unit:: pcs
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CantidadPrecio sin IVAPrecio con IVA
1 + 39,0217 €47,2163 €
5 + 37,3948 €45,2477 €
10 + 35,7690 €43,2805 €
25 + 34,1429 €41,3129 €


Basic information:

Marking manufacturerAPT60GA60JD60 
Type of component:IGBT-PT 
KategorieIGBT Full Silicon 
Configuration:single 1*(T+D) 
Construction:1*(IGBT+D) 
Number of circuits (in case) 1 ks
Type of material:!_si-silicon_! 
RoHSSí 
REACHNo 
Type of casing:MODUL 
Case:SOT-227 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 600 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)112 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)112 [A]
Idc max (Tc/Ta=100÷109°C)60 [A]
UCE (sat) (@25°C)[V]
Pmax with heatsink (TC=25°C)356 [W]
tr (Turn-on / rise time)49 [ns]
tf/tq (Turn-off / fall time)91 [ns]
Qg (Total Gate Charge)296 [nC]
Cin (Input Capacitance)8010 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.35 [°C/W]
Rthjc2 Dioda, Tyristor0.6 [°C/W]
RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
Number of Pins
D - Outer diameter 4.1 [mm]
W - Width 25.3 [mm]
L - Length 38.1 [mm]
H - Height 12 [mm]
Rozměry/Velikost (LxWxH)SOT-227 [mm]

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