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APT60GF120JRDQ3

Trans IGBT Module N-CH 1200V 149A 625000mW

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APT60GF120JRDQ3 Microchip Technology
APT60GF120JRDQ3 Microchip Technology
APT60GF120JRDQ3 Microchip Technology
pcs
ID Code:187863
Fabricante:Microchip Technology
Precio con IVA : 163,4224 €
Precio sin IVA : 135,0599 €
VAT:21 %
Disponibilidad:a petición
Stock total:0 pcs
Marking manufacturer: APT60GF120JRDQ3
Unit:: pcs
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CantidadPrecio sin IVAPrecio con IVA
1 + 135,0599 €163,4224 €
5 + 129,4313 €156,6119 €
10 + 123,8035 €149,8023 €
25 + 118,1762 €142,9932 €


Basic information:

Marking manufacturerAPT60GF120JRDQ3 
Type of component:IGBT-NPT 
KategorieIGBT Full Silicon 
Configuration:single 1*(T+D) 
Construction:1*(IGBT+D) 
Number of circuits (in case) 1 ks
Type of material:!_si-silicon_! 
RoHSSí 
REACHNo 
Type of casing:MODUL 
Case:SOT-227 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:36 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 1200 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)149 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)149 [A]
Idc max (Tc/Ta=100÷109°C)79 [A]
Uisol (@25°C/1min/50Hz)2500 [V]
UCE (sat) (@25°C)2.5 [V]
Pmax with heatsink (TC=25°C)625 [W]
tr (Turn-on / rise time)100 [ns]
tf/tq (Turn-off / fall time)38 [ns]
Qg (Total Gate Charge)685 [nC]
Cin (Input Capacitance)7080 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.2 [°C/W]
RM - Pitch pins15 [mm]
RM1 - Spacing of rows 12.7 [mm]
Number of Pins
D - Outer diameter 4.1 [mm]
W - Width 25.3 [mm]
L - Length 38.1 [mm]
H - Height 12 [mm]
Rozměry/Velikost (LxWxH)SOT-227 [mm]

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