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APT64GA90LD30

PT IGBT, 900V, 117A, 500W, TO-264

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APT64GA90LD30 Microchip Technology
APT64GA90LD30 Microchip Technology
APT64GA90LD30 Microchip Technology
pcs
ID Code:187786
Fabricante:Microchip Technology
Precio con IVA : 17,2990 €
Precio sin IVA : 14,2967 €
VAT:21 %
Disponibilidad:a petición
Stock total:0 pcs
Marking manufacturer: APT64GA90LD30
Central warehouse Zdice: 0 pcs
Unit:: pcs
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CantidadPrecio sin IVAPrecio con IVA
1 + 14,2967 €17,2990 €
5 + 13,7029 €16,5805 €
10 + 13,1070 €15,8594 €
25 + 12,5115 €15,1389 €


Basic information:

Marking manufacturerAPT64GA90LD30 
Type of component:IGBT-PT 
KategorieIGBT Full Silicon 
Configuration:single 1*(T+D) 
Construction:1*(IGBT+D) 
Number of circuits (in case) 1 ks
Type of material:!_si-silicon_! 
RoHSSí 
REACHNo 
Type of casing:THT 
Case:TO-264 
NOVINKA
RoHS1Ano 

Packaging and weight:

Unit:pcs 
Weight:12 [g]
Type of packaging:TUBE 
Small package (Number of units):30 

Electro-physical parameters:

Udc (URRM, UCEO, Umax) 900 [V] ?

Udc - definitions for components


Udc = URRM - Diode

Udc = UDRM , URRM - Thyristor

Udc = UCEO - Transistors

Udc = Umax -

Idc max (Tc/Ta=25÷160°C)117 [A] ?

Current at the lowest temperature.
The specifications in the datasheet.


Idc=IF (AV) - Diode

Idc=IT (AV) - Thyristor

Idc=IC max - BJT, IGBT

Idc=ID max - Transistor: FET

 

Idc max (Tc/Ta=25°C)117 [A]
Idc max (Tc/Ta=100÷109°C)64 [A]
UCE (sat) (@25°C)2.5 [V]
Pmax with heatsink (TC=25°C)500 [W]
tr (Turn-on / rise time)26 [ns]
tf/tq (Turn-off / fall time)104 [ns]
Qg (Total Gate Charge)162 [nC]
Cin (Input Capacitance)3525 [pF]

Thermal and mechanical parameters:

Tmin (minimum working temperature)-55 [°C]
Tmax (maximum working temperature)150 [°C]
Rthjc1 IGBT0.25 [°C/W]
Rthjc2 Dioda, Tyristor0.8 [°C/W]
RM - Pitch pins5.45 [mm]
Number of Pins
D - Outer diameter 3.25 [mm]
W - Width 20 [mm]
L - Length 26 [mm]
H - Height [mm]
Rozměry/Velikost (LxWxH)TO-264 [mm]
Dimensions of outlets1,3 [mm]
Lv - Length of outlets20 [mm]

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