This uses our latest technology trench IGBT, optimised for fast switching, and a SiC diode.
Some of the system-level benefits are improved efficiency, reduced volume/ size and weight. New inverter/converter topologies can also be realised with these devices. SiC devices (MOSFETs, Schottky diodes) are still expensive and hybrid Si/Sic module strikes a perfect balance between performance and cost. The SiC Schottky almost completely eliminates the reverse recovery loss. As a result the Erec loss is minuscule in hybrid module. ln addition, for applications such as PWM
inverters that have a hard switched turn-on there is also a significant reduction in turn-on losses due the dramatic reduction in free wheel diode recovery current.
Información básica:
Fabricante de la marca | DIM1200ESM33-MH00 |
Kategorie | IGBT Hybrid SiC |
Configuración: | single-E3*(T+D) |
Construcción: | 3*(IGBT+D) |
Número de circuitos | 3 ks |
Tipo de caso: | Modul |
Caso [inch] : | MODUL-E |
Tipo de material: | SiC Hybrid |
Material Base | ALSiC |
RoHS | Sí |
REACH | No |
NOVINKA | A |
RoHS1 | Ano |
Embalaje y peso:
Unidad: | pcs |
Peso: | 1900 [g] |
Tipo de envase: | BOX |
Paquete pequeño (Número de unidades): | 2 |
Parámetros electrofísicos:
IFAV / IC (Tc/Ta=25°C) | 1200 [A] |
IF(AV) (Tc/Ta=100÷119°C) | 1200 [A] |
Uisol (@25°C/1min/50Hz) | 6000 [V] |
UF (maximum forward voltage) | 2.3 [VDC] |
UCE (sat) (@25°C) | 2.9 [V] |
Pd -s chladičem (Tc=25°C) | 17900 [W] |
tr (Turn-on / rise time) | 360 [ns] |
tf (turn-off=fall time) | 290 [ns] |
Qg (Total Gate Charge) | 13000 [nC] |
Cin/CL Load Capacitance | 140000 pF |
Parámetros térmicos y mecánicos:
Dimensiones (L*W*H) [mm]: | 190x140x38 |
Tmin (temperatura mínima de trabajo) | -40 [°C] |
Tmax (temperatura de trabajo máxima) | 150 [°C] |
Rthjc1 IGBT | 0.007 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.03 [°C/W] |
L - Longitud | 190 [mm] |
W - Ancho | 140 [mm] |
H - Altura | 38 [mm] |