MSCSM120AM027CD3AG
MOSFET 1200V Full SiC MOS + SIC Diode
| ID Code: | 185288 |
| Fabricante: | Microsemi |
| Precio con IVA : | 1 380,8576 € |
| Precio sin IVA : | 1 141,2046 € |
| VAT: | 21 % |
| Disponibilidad: | a petición |
| Stock total: | 0 pcs |
| Fabricante de la marca: | MSCSM120AM027CD3AG |
| Almacén central Zdice: | 0 pcs |
| De almacenamiento externo (tiempo de entrega de 5÷10 días): | 0 pcs |
| Unidad:: | pcs |
| !_prehled mnozstevnich slev_! | Cantidad | Precio sin IVA | Precio con IVA |
| 1 + | 1 141,2046 € | 1 380,8576 € |
| 3 + | 1 073,1995 € | 1 298,5714 € |
MOSFET 1200V Full SiC Low Stray Inductance Phase Leg SiC The following are the features of
. SiC Power MOSFET
. Very Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M6 power connectors
. Aluminum nitride (AlN) substrate for improved thermal performance
. SiC Power MOSFET
. Very Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M6 power connectors
. Aluminum nitride (AlN) substrate for improved thermal performance
Información básica:
| Fabricante de la marca | MSCSM120AM027CD3AG |
| Type of casing: | MODUL |
| Caso: | SEMITRANS-3 |
| Kategorie | Full SiC (MOS+D) |
| Tipo de componente: | !_n-mosfet_! |
| Configuración: | !_half bridge_! |
| RoHS | Sí |
| REACH | Sí |
| NOVINKA | A |
| UL94 | V-0 |
Parámetros eléctricos:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 733 [A] |
| Idc max (Tc/Ta=25°C) | 733 [A] |
| Idc max (Tc/Ta=80÷89°C) | 584 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| IR (reverse current) | 1800 [µA] |
| Pd -s chladičem (Tc=25°C) | 2970 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 3.5 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf (turn-off=fall time) | 67 [ns] |
| Ft (transition/operation frequency) (@Inom.) | 0.06 [MHz] |
| Qg (Total Gate Charge) | 2088 [nC] |
| Cin/CL Load Capacitance | 27000 pF |
Material, color, diseño:
| Tipo de material: | !_sic full_! |
| Material Base | Cu |
Parámetros térmicos y mecánicos:
| Tmin (temperatura mínima de trabajo) | -40 [°C] |
| Tmax (temperatura de trabajo máxima) | 175 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.07 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
Dimensiones:
| PIN dimensiones | 0.00 [mm] |
Embalaje y peso:
| Unidad: | pcs |
| Peso: | 350 [g] |
| Embalaje: | 6 |
Alternativas y sustitutos
| Alternativa 1: | CAS120M12BM2 |
| Alternativa 2: | SKM350MB120SCH17 |
| Productos alternativos 1: | MD400HFR120C2S |
| Productos alternativos 2: | FF2MR12KM1 |
!_souvisejici zbozi_! - MSCSM120AM027CD3AG
 |
I+SEMITRANS3- 62x106=005W-AL Thermally Conductive Pad for insulated Packages as SEMITRANS-3 and in size 62x106mm ID: 176035 Fabricante no.: F05-AL2-62x106mm
| Stock total: 926 Fabricante: - |
Todos los precios aparecen sin IVA y no incluyen los costos, que se sumarán a la orden como un elemento independiente de envío.
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