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MSCSM120AM042CD3AG
MOSFET 1200V Full SiC MOS + SiC Diode
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| ID Code: | 185289 |
| Fabricante: | Microchip Technology |
| Precio con IVA : | 1 292,626194 € |
| Precio sin IVA : | 1 068,286111 € |
| VAT: | 21 % |
| Disponibilidad: | En la acción |
| Stock total: | 3 pcs |
| Fabricante de la marca: | MSCSM120AM042CD3AG |
| Almacén central Zdice: | 3 pcs |
| Plazo de entrega de fábrica: | 42wk-49wk |
| Unidad:: | pcs |
| Resumen de descuentos por volumen | Cantidad (pcs) | Precio sin IVA | Precio con IVA | |
| 1 + | 1 068,286111 € | 1 292,626194 € | ||
| 5 + | 1 023,775708 € | 1 238,768607 € | ||
| 10 + | 979,263721 € | 1 184,909102 € | ||
| 25 + | 934,751734 € | 1 131,049598 € |
MOSFET 1200V Full SiC Low Stray Inductance Phase Leg SiC The following are the features of
. SiC Power MOSFET
. Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M6 power connectors
. Aluminum nitride (AlN) substrate for improved thermal performance
. SiC Power MOSFET
. Low RDS(on)
. High temperature performance
. Silicon carbide (SiC) Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature-independent switching behavior
. Positive temperature coefficient on VF
. Kelvin source for easy drive
. Low stray inductance
. M6 power connectors
. Aluminum nitride (AlN) substrate for improved thermal performance
Información básica:
| Fabricante de la marca | MSCSM120AM042CD3AG |
| Plazo de entrega de fábrica | 42wk-49wk [wk] |
| Tipo de componente: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuración: | Half Bridge 1*(Phase Leg) |
| Especificación: | SiC N-Channel MOSFET |
| Construcción: | 2*FET-BD+2*D |
| Tipo de caso: | Modul |
| Caso [inch] : | D3 |
| Tipo de material: | SiC Full |
| RoHS | Sí |
| REACH | No |
| NOVINKA | N |
| RoHS1 | Ano |
| UL94 | V-0 |
Embalaje y peso:
| Unidad: | pcs |
| Peso: | 420 [g] |
| Tipo de envase: | BOX |
| Paquete pequeño (Número de unidades): | 1 |
Parámetros electrofísicos:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=80÷89°C) | 395 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| IR (reverse current) | 12 [µA] |
| Pd -s chladičem (Tc=25°C) | 2031 [W] |
| Input Logic Level (Ugs level) | 20V |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf (turn-off=fall time) | 67 [ns] |
| Qg (Total Gate Charge) | 1392 [nC] |
| Cin/CL Load Capacitance | 18100 pF |
Parámetros térmicos y mecánicos:
| Dimensiones (L*W*H) [mm]: | 108x62x31 |
| Tmin (temperatura mínima de trabajo) | -40 [°C] |
| Tmax (temperatura de trabajo máxima) | 175 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.074 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
| L - Longitud | 108 [mm] |
| W - Ancho | 62 [mm] |
| H - Altura | 31 [mm] |
Alternativas y sustitutos
| Alternativa 1: | 176372 - CAS300M12BM2 (WOL) |
| Alternativa 2: | 174576 - SKM350MB120SCH17 (SMK) |
| Productos alternativos 1: | MD400HFR120C2S |
| Productos alternativos 2: | FF3MR12KM1 |
!_souvisejici zbozi_! - MSCSM120AM042CD3AG
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Todos los precios aparecen sin IVA y no incluyen los costos, que se sumarán a la orden como un elemento independiente de envío.