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MSCSM120AM042CT6LIAG
MOSFET 1200V Full SiC MOS + SiC Diode
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| ID Code: | 185959 |
| Fabricante: | Microchip Technology |
| Precio con IVA : | 1 450,3994 € |
| Precio sin IVA : | 1 198,6772 € |
| VAT: | 21 % |
| Disponibilidad: | a petición |
| Stock total: | 0 pcs |
| Fabricante de la marca: | MSCSM120AM042CT6LIAG |
| Almacén central Zdice: | 0 pcs |
| Unidad:: | pcs |
| !_prehled mnozstevnich slev_! | Cantidad | Precio sin IVA | Precio con IVA | |
| 1 + | 1 198,6772 € | 1 450,3994 € | ||
| 5 + | 1 148,7312 € | 1 389,9647 € | ||
| 10 + | 1 098,7865 € | 1 329,5316 € | ||
| 25 + | 1 048,8413 € | 1 269,0980 € |
MOSFET 1200V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM120AM02CT6LIAG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Información básica:
| Fabricante de la marca | MSCSM120AM042CT6LIAG |
| Tipo de componente: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuración: | Half Bridge 1*(Phase Leg) |
| Especificación: | !_sic n-channel mosfet_! |
| Construcción: | 2*FET-BD+2*D |
| Tipo de material: | SiC Full |
| RoHS | Sí |
| REACH | No |
| Type of casing: | MODUL |
| Caso: | !_sp6li_! |
| NOVINKA | A |
| RoHS1 | Ano |
| UL94 | V-0 |
Embalaje y peso:
| Unidad: | pcs |
| Peso: | 350 [g] |
| Tipo de envase: | BOX |
| Paquete pequeño (Número de unidades): | 6 |
Parámetros electrofísicos:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 495 [A] |
| Idc max (Tc/Ta=25°C) | 495 [A] |
| Idc max (Tc/Ta=80÷89°C) | 395 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| IR (reverse current) | 1200 [µA] |
| Pd -s chladičem (Tc=25°C) | 2031 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 5.2 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 55 [ns] |
| tf (turn-off=fall time) | 67 [ns] |
| Qg (Total Gate Charge) | 1392 [nC] |
| Cin/CL Load Capacitance | 18100 pF |
Parámetros térmicos y mecánicos:
| Tmin (temperatura mínima de trabajo) | -40 [°C] |
| Tmax (temperatura de trabajo máxima) | 175 [°C] |
| Rthjc (case) | 0.075 [°C/W] |
| Rthjc1 IGBT | 0.074 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.175 [°C/W] |
| W - Ancho | 62 [mm] |
| L - Longitud | 108 [mm] |
| H - Altura | 22 [mm] |
| Rozměry/Velikost (LxWxH) | 108x62x22 [mm] |
!_souvisejici zbozi_! - MSCSM120AM042CT6LIAG
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Todos los precios aparecen sin IVA y no incluyen los costos, que se sumarán a la orden como un elemento independiente de envío.