MOSFET 1700V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM170AM058CD3AG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Información básica:
Fabricante de la marca | MSCSM170AM058CD3AG |
Plazo de entrega de fábrica | 42wk-49wk [wk] |
Tipo de componente: | SiC MOSFET Tranzistor |
Kategorie | Full SiC (MOS-BD+D) |
Configuración: | Half Bridge 1*(Phase Leg) |
Especificación: | SiC N-Channel MOSFET |
Construcción: | 2*FET-BD+2*D |
Tipo de caso: | Modul |
Caso [inch] : | D3 |
Tipo de material: | SiC Full |
RoHS | Sí |
REACH | No |
NOVINKA | A |
RoHS1 | Ano |
UL94 | V-0 |
Embalaje y peso:
Unidad: | pcs |
Peso: | 420 [g] |
Tipo de envase: | BOX |
Paquete pequeño (Número de unidades): | 1 |
Parámetros electrofísicos:
Udc (URRM, UCEO, Umax) | 1700 [V] |
Idc max (Tc/Ta=80÷89°C) | 277 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.8 [VDC] |
IR (reverse current) | 1200 [µA] |
Pd -s chladičem (Tc=25°C) | 1641 [W] |
Input Logic Level (Ugs level) | 20V |
tf (turn-off=fall time) | 30 [ns] |
Qg (Total Gate Charge) | 1068 [nC] |
Cin/CL Load Capacitance | 19800 pF |
Parámetros térmicos y mecánicos:
Dimensiones (L*W*H) [mm]: | 108x62x31 |
Tmin (temperatura mínima de trabajo) | -40 [°C] |
Tmax (temperatura de trabajo máxima) | 175 [°C] |
Rthjc (case) | 0.075 [°C/W] |
Rthjc1 IGBT | 0.091 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.101 [°C/W] |
L - Longitud | 108 [mm] |
W - Ancho | 62 [mm] |
H - Altura | 31 [mm] |
Alternativas y sustitutos
Alternativa 1: | 177329 - CAS300M17BM2 (WOL) |
Alternativa 2: | 186080 - SKM260MB170SCH17 (SMK) |