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MSCSM170AM23CT1AG
Full SiC MOSFET 1700V / 98A - Phase leg + SiC Diodes
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| ID Code: | 186224 |
| Fabricante: | Microchip Technology |
| Precio con IVA : | 360,396051 € |
| Precio sin IVA : | 297,847976 € |
| VAT: | 21 % |
| Disponibilidad: | En la acción |
| Stock total: | 4 pcs |
| Fabricante de la marca: | MSCSM170AM23CT1AG |
| Almacén central Zdice: | 4 pcs |
| Plazo de entrega de fábrica: | 42wk-49wk |
| Unidad:: | pcs |
| Resumen de descuentos por volumen | Cantidad (pcs) | Precio sin IVA | Precio con IVA | |
| 1 + | 297,847976 € | 360,396051 € | ||
| 5 + | 285,438105 € | 345,380107 € | ||
| 10 + | 273,027443 € | 330,363206 € | ||
| 25 + | 260,617177 € | 315,346784 € |
• SiC Power MOSFET - High speed switching, - Low RDS(on), - Ultra low loss
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Kelvin source for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Información básica:
| Fabricante de la marca | MSCSM170AM23CT1AG |
| Plazo de entrega de fábrica | 42wk-49wk [wk] |
| Tipo de componente: | SiC MOSFET Tranzistor |
| Kategorie | Full SiC (MOS-BD+D) |
| Configuración: | Half Bridge 1*(Phase Leg) |
| Especificación: | SiC N-Channel MOSFET |
| Construcción: | 2*FET-BD+2*D |
| Tipo de caso: | Modul |
| Caso [inch] : | SP1F |
| Tipo de material: | SiC Full |
| RoHS | Sí |
| REACH | No |
| NOVINKA | A |
| RoHS1 | Ano |
Embalaje y peso:
| Unidad: | pcs |
| Peso: | 96 [g] |
| Tipo de envase: | BOX |
| Paquete pequeño (Número de unidades): | 1 |
Parámetros electrofísicos:
| Udc (URRM, UCEO, Umax) | 1700 [V] |
| Idc max (Tc/Ta=80÷89°C) | 98 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| Pd -s chladičem (Tc=25°C) | 602 [W] |
| Input Logic Level (Ugs level) | 20V |
| trr recovery time (If=Inom.,@25°C) | 27 [ns] |
| tr (Turn-on / rise time) | 17 [ns] |
| tf (turn-off=fall time) | 19 [ns] |
| Qg (Total Gate Charge) | 356 [nC] |
| Cin/CL Load Capacitance | 6600 pF |
Parámetros térmicos y mecánicos:
| Dimensiones (L*W*H) [mm]: | 52x43x12 |
| Tmin (temperatura mínima de trabajo) | -40 [°C] |
| Tmax (temperatura de trabajo máxima) | 150 [°C] |
| Rthjc1 IGBT | 0.25 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.276 [°C/W] |
| RM - Ráster | 3.8 [mm] |
| RM1 - Espaciado de filas | 38 [mm] |
| L - Longitud | 51.6 [mm] |
| W - Ancho | 42.5 [mm] |
| H - Altura | 12 [mm] |
| PIN dimensiones | 1,4 [mm] |
| Lv - Length of outlets | 5.8 [mm] |
Alternativas y sustitutos
| Alternativa 1: | 180130 - FF11MR12W1M1_B11 (INF) |
| Productos alternativos 1: | FF11MR12W1M1_B11 |